High-resolution reciprocal space mapping of distributed Bragg reflectors and virtual substrates : High-resolution X-ray Diffraction and Imaging
Identifieur interne : 002D30 ( Main/Repository ); précédent : 002D29; suivant : 002D31High-resolution reciprocal space mapping of distributed Bragg reflectors and virtual substrates : High-resolution X-ray Diffraction and Imaging
Auteurs : RBID : Pascal:11-0500148Descripteurs français
- Pascal (Inist)
- Réseau réciproque, Diffraction RX, Composition chimique, Distribution concentration, Relaxation réseau, Analyse donnée, Théorie cinématique, Profil profondeur, Dislocation interfaciale, Gallium Indium Arséniure Mixte, Réflecteur Bragg réparti, Réflexion RX, Alliage Ge Si, Gallium Phosphoarséniure, InxGa1-xAs.
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Abstract
Epitaxially grown silicon germanium alloy layers, prepared as virtual substrates for modulation-doped field effect transistors, and InxGa1-xAs and GaPxAs1-x graded layers on GaAs substrates prepared as distributed Bragg reflectors (DBRs), have been investigated by the reciprocal space mapping (RSM) technique. These structures possess a strong concentration gradient and crystallographic lattice relaxation across the layer, which makes the data analysis challenging. Using kinematic diffraction theory for RSM analysis gives a rather simple way to evaluate the concentration, tilt and relaxation gradients, and the layer thicknesses, as well as the dependence of these values on the azimuthal direction of the diffraction plane. The density of 60° misfit dislocations for partially relaxed layers is also estimated. Characteristics of wide aperture Bragg reflectors based on these structures are calculated.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">High-resolution reciprocal space mapping of distributed Bragg reflectors and virtual substrates : High-resolution X-ray Diffraction and Imaging</title><author><name sortKey="Zhylik, A" uniqKey="Zhylik A">A. Zhylik</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Theoretical Physics, Belarusian State University, 4 Fr. Skariny av.</s1><s2>220030 Minsk</s2><s3>BLR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Biélorussie</country><wicri:noRegion>220030 Minsk</wicri:noRegion></affiliation></author><author><name sortKey="Rinaldi, F" uniqKey="Rinaldi F">F. Rinaldi</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Institut für Optoelektronik, University of Ulm, Albert-Einstein-Allee 45</s1><s2>89081 Ulm</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName><orgName type="university">Université d'Ulm</orgName></affiliation></author><author><name sortKey="Myronov, M" uniqKey="Myronov M">M. Myronov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Theoretical Physics, Belarusian State University, 4 Fr. Skariny av.</s1><s2>220030 Minsk</s2><s3>BLR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Biélorussie</country><wicri:noRegion>220030 Minsk</wicri:noRegion></affiliation></author><author><name sortKey="Saito, K" uniqKey="Saito K">K. Saito</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Bruker AXS K.K., 3-9 Moriya, Kanagawa</s1><s2>221-0022 Yokohama</s2><s3>JPN</s3><sZ>4 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>221-0022 Yokohama</wicri:noRegion></affiliation></author><author><name sortKey="Menzel, S" uniqKey="Menzel S">S. Menzel</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Institut für Optoelektronik, University of Ulm, Albert-Einstein-Allee 45</s1><s2>89081 Ulm</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName><orgName type="university">Université d'Ulm</orgName></affiliation></author><author><name sortKey="Dobbie, A" uniqKey="Dobbie A">A. Dobbie</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, The University of Warwick</s1><s2>Coventry CV4 7AL</s2><s3>GBR</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Coventry CV4 7AL</wicri:noRegion></affiliation></author><author><name sortKey="Leadley, D R" uniqKey="Leadley D">D. R. Leadley</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, The University of Warwick</s1><s2>Coventry CV4 7AL</s2><s3>GBR</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Coventry CV4 7AL</wicri:noRegion></affiliation></author><author><name sortKey="Ulyanenkova, T" uniqKey="Ulyanenkova T">T. Ulyanenkova</name><affiliation wicri:level="3"><inist:fA14 i1="05"><s1>University Karlsruhe, Engesserstr. 15</s1><s2>76131 Karlsruhe</s2><s3>DEU</s3><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Karlsruhe</region><settlement type="city">Karlsruhe</settlement></placeName></affiliation></author><author><name sortKey="Feranchuk, I D" uniqKey="Feranchuk I">I. D. Feranchuk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Theoretical Physics, Belarusian State University, 4 Fr. Skariny av.</s1><s2>220030 Minsk</s2><s3>BLR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Biélorussie</country><wicri:noRegion>220030 Minsk</wicri:noRegion></affiliation></author><author><name sortKey="Ulyanenkov, A" uniqKey="Ulyanenkov A">A. Ulyanenkov</name><affiliation wicri:level="3"><inist:fA14 i1="06"><s1>Bruker AXS GmbH, Ostliche Rheinbrückenstr. 49</s1><s2>76187 Karlsruhe</s2><s3>DEU</s3><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Karlsruhe</region><settlement type="city">Karlsruhe</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0500148</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0500148 INIST</idno><idno type="RBID">Pascal:11-0500148</idno><idno type="wicri:Area/Main/Corpus">002572</idno><idno type="wicri:Area/Main/Repository">002D30</idno></publicationStmt><seriesStmt><idno type="ISSN">1862-6300</idno><title level="j" type="abbreviated">Phys. status solidi, A Appl. mater. sci. : (Print)</title><title level="j" type="main">Physica status solidi. A, Applications and materials science : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical composition</term><term>Concentration distribution</term><term>Data analysis</term><term>Depth profiles</term><term>Distributed Bragg reflectors</term><term>Gallium Arsenides phosphides</term><term>Gallium Indium Arsenides Mixed</term><term>Ge-Si alloys</term><term>Kinematic theory</term><term>Lattice relaxation</term><term>Misfit dislocations</term><term>Reciprocal lattice</term><term>X-ray reflection</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Réseau réciproque</term><term>Diffraction RX</term><term>Composition chimique</term><term>Distribution concentration</term><term>Relaxation réseau</term><term>Analyse donnée</term><term>Théorie cinématique</term><term>Profil profondeur</term><term>Dislocation interfaciale</term><term>Gallium Indium Arséniure Mixte</term><term>Réflecteur Bragg réparti</term><term>Réflexion RX</term><term>Alliage Ge Si</term><term>Gallium Phosphoarséniure</term><term>InxGa1-xAs</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Epitaxially grown silicon germanium alloy layers, prepared as virtual substrates for modulation-doped field effect transistors, and In<sub>x</sub>Ga<sub>1-x</sub>As and GaP<sub>x</sub>As<sub>1-x</sub> graded layers on GaAs substrates prepared as distributed Bragg reflectors (DBRs), have been investigated by the reciprocal space mapping (RSM) technique. These structures possess a strong concentration gradient and crystallographic lattice relaxation across the layer, which makes the data analysis challenging. Using kinematic diffraction theory for RSM analysis gives a rather simple way to evaluate the concentration, tilt and relaxation gradients, and the layer thicknesses, as well as the dependence of these values on the azimuthal direction of the diffraction plane. The density of 60° misfit dislocations for partially relaxed layers is also estimated. Characteristics of wide aperture Bragg reflectors based on these structures are calculated.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1862-6300</s0></fA01><fA03 i2="1"><s0>Phys. status solidi, A Appl. mater. sci. : (Print)</s0></fA03><fA05><s2>208</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>High-resolution reciprocal space mapping of distributed Bragg reflectors and virtual substrates : High-resolution X-ray Diffraction and Imaging</s1></fA08><fA11 i1="01" i2="1"><s1>ZHYLIK (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>RINALDI (F.)</s1></fA11><fA11 i1="03" i2="1"><s1>MYRONOV (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>SAITO (K.)</s1></fA11><fA11 i1="05" i2="1"><s1>MENZEL (S.)</s1></fA11><fA11 i1="06" i2="1"><s1>DOBBIE (A.)</s1></fA11><fA11 i1="07" i2="1"><s1>LEADLEY (D. R.)</s1></fA11><fA11 i1="08" i2="1"><s1>ULYANENKOVA (T.)</s1></fA11><fA11 i1="09" i2="1"><s1>FERANCHUK (I. D.)</s1></fA11><fA11 i1="10" i2="1"><s1>ULYANENKOV (A.)</s1></fA11><fA14 i1="01"><s1>Department of Theoretical Physics, Belarusian State University, 4 Fr. 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All rights reserved.</s1></fA44><fA45><s0>7 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0500148</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica status solidi. A, Applications and materials science : (Print)</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>Epitaxially grown silicon germanium alloy layers, prepared as virtual substrates for modulation-doped field effect transistors, and In<sub>x</sub>Ga<sub>1-x</sub>As and GaP<sub>x</sub>As<sub>1-x</sub> graded layers on GaAs substrates prepared as distributed Bragg reflectors (DBRs), have been investigated by the reciprocal space mapping (RSM) technique. These structures possess a strong concentration gradient and crystallographic lattice relaxation across the layer, which makes the data analysis challenging. Using kinematic diffraction theory for RSM analysis gives a rather simple way to evaluate the concentration, tilt and relaxation gradients, and the layer thicknesses, as well as the dependence of these values on the azimuthal direction of the diffraction plane. The density of 60° misfit dislocations for partially relaxed layers is also estimated. 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